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  Transistor  (11,740 offers of 5,371,734 product items)

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Infineon IKW08N120CS7XKSA1 Single IGBT, 8 A 1200 V, 3-Pin TO-247-3, Through Hole / 2326723 (3 offers) 
Maximum Continuous Collector Current = 8 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247-3 Mounting Type = Through H...
Infineon
IKW08N120CS7XKSA1
from £ 1.98*
per piece
 
 piece
Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V / 2445377 (1 offer) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Number of Transistors = 7
Infineon
FP100R12KT4B11BOSA1
from £ 182.111*
per piece
 
 piece
Transistor: IGBT; 900V; 35A; 290W; TO247-3 (1 offer) 
Manufacturer: MICROCHIP (MICROSEMI) Mounting: THT Case: TO247-3 Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 35A Pulsed collector current: 105A Turn-on time: 25ns T...
MICROCHIP (MICROSEMI)
APT35GA90B
from £ 5.73*
per piece
 
 piece
Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247 / 2184398 (2 offers) 
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 1600 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 263 W Package Type = TO-247 Channel Type = N Pi...
Infineon
IHW30N160R5XKSA1
from £ 2.01*
per piece
 
 piece
Infineon FP100R12N2T7BPSA1 3 Phase IGBT, 100 A 1200 V, 31-Pin Module, Chassis Mount / 2326700 (1 offer) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW Package Type = Module Mounting Type = C...
Infineon
FP100R12N2T7BPSA1
£ 1,090.00*
per 10 pieces
 
 packet
Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 (1 offer) 
Manufacturer: IXYS Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 16A Pulsed collector current: 120A Turn-on time: 220ns Turn-off time: 9...
IXYS
IXBH16N170
from £ 8.87*
per piece
 
 piece
Infineon FP100R12N2T7B11BPSA1 IGBT, 100 A 1200 V / 2539817 (2 offers) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW
Infineon
FP100R12N2T7B11BPSA1
from £ 139.59*
per piece
 
 piece
Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 (1 offer) 
Manufacturer: INFINEON TECHNOLOGIES Mounting: THT Case: TO247-4 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 54A Pulsed collector current: 200A Turn-on time: 27ns T...
Infineon
IGZ50N65H5XKSA1
from £ 1.66*
per piece
 
 piece
Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3 / 2250571 (2 offers) 
The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction...
Infineon
IHW30N65R6XKSA1
from £ 1.1881*
per piece
 
 piece
Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ (1 offer) 
Manufacturer: ALPHA & OMEGA SEMICONDUCTOR Mounting: SMD Case: TO252 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.57V Collector current: 5A Puls...
Alpha & Omega Semiconductor
AOD5B65M1
from £ 0.47*
per piece
 
 piece
Infineon IKW25N120CS7XKSA1 Single IGBT, 25 A 1200 V, 3-Pin TO-247-3, Through Hole / 2326727 (3 offers) 
Maximum Continuous Collector Current = 25 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247-3 Mounting Type = Through ...
Infineon
IKW25N120CS7XKSA1
from £ 3.19*
per piece
 
 piece
Infineon FP100R12N2T7B11BPSA1 IGBT, 100 A 1200 V / 2539818 (1 offer) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW
Infineon
FP100R12N2T7B11BPSA1
from £ 135.64*
per piece
 
 piece
Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO268 (1 offer) 
Manufacturer: IXYS Mounting: SMD Case: TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 63ns Turn-off time: 1.8µs...
IXYS
IXBT10N170
from £ 6.29*
per piece
 
 piece
Infineon FP100R12N3T7B11BPSA1 IGBT, 100 A 1200 V / 2539820 (2 offers) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW
Infineon
FP100R12N3T7B11BPSA1
from £ 159.01*
per piece
 
 piece
Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268 (1 offer) 
Manufacturer: IXYS Mounting: SMD Case: TO268 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 230A Turn-on time: 190ns Turn-off time: 128...
IXYS
IXBT24N170
from £ 17.28*
per piece
 
 piece
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