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  Transistor  (11,740 offers of 5,371,715 product items)

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Infineon IGW30N65L5XKSA1 IGBT, 85 A 650 V, 3-Pin PG-TO247-3 / 2156633 (2 offers) 
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
IGW30N65L5XKSA1
from £ 1.66*
per piece
 
 piece
Infineon FP100R06KE3BOSA1 IGBT Module, 100 A 600 V Module, Panel Mount / 2737390 (1 offer) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 335 W Package Type = Module Mounting Type = ...
Infineon
FP100R06KE3BOSA1
from £ 1,421.01*
per 10 pieces
 
 packet
Transistor: IGBT; 900V; 60A; 170W; TO3P (1 offer) 
Manufacturer: NTE Electronics Mounting: THT Case: TO3P Collector-emitter voltage: 900V Gate-emitter voltage: ±25V Collector current: 60A Pulsed collector current: 120A Turn-on time: 460ns Turn-off ...
NTE Electronics
NTE3322
from £ 19.66*
per piece
 
 piece
Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V / 2500226 (2 offers) 
Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW
Infineon
FF900R17ME7B11BPSA1
from £ 355.48*
per piece
 
 piece
Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3 / 2591532 (3 offers) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 305 W Package Type = PG-TO247-3
Infineon
IKW50N65F5FKSA1
from £ 1.90*
per piece
 
 piece
Infineon FP15R12W1T7B11BOMA1 Hex IGBT, 15 A 1200 V, 23-Pin EasyPIM / 2266056 (1 offer) 
Maximum Continuous Collector Current = 15 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW Package Type = EasyPIM Channel Type = N P...
Infineon
FP15R12W1T7B11BOMA1
from £ 741.72*
per 24 pieces
 
 packet
Infineon IKQ75N120CH3XKSA1 IGBT, 150 A PG-TO247-3-46 / 2605098 (2 offers) 
Maximum Continuous Collector Current = 150 A Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 938 W Package Type = PG-TO247-3-46
Infineon
IKQ75N120CH3XKSA1
from £ 9.00*
per piece
 
 piece
Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V / 2500227 (1 offer) 
Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW
Infineon
FF900R17ME7B11BPSA1
from £ 334.23*
per piece
 
 piece
Transistor: IGBT; 650V; 90A; 325W; TO247-3 (1 offer) 
Manufacturer: INFINEON TECHNOLOGIES Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Collector current: 90A Type of transistor: IGBT Power dissipation: 325W Kind of package: tube
Infineon
IRGP4263DPBF
from £ 4.87*
per piece
 
 piece
Infineon IGZ100N65H5XKSA1 IGBT PG-TO247-4 / 2580992 (2 offers) 
Maximum Power Dissipation = 536 W Package Type = PG-TO247-4
Infineon
IGZ100N65H5XKSA1
from £ 3.92*
per piece
 
 piece
Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263 (1 offer) 
Manufacturer: IXYS Mounting: SMD Case: TO263 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns...
IXYS
IXBA16N170AHV
from £ 16.54*
per piece
 
 piece
Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V / 2445374 (2 offers) 
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Number of Transistors = 7
Infineon
FP100R12KT4B11BOSA1
from £ 182.626*
per piece
 
 piece
Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247 / 2184393 (3 offers) 
The Infineon IHW series reverse conducting IGBT 1200 V, 25 A with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of...
Infineon
IHW25N120E1XKSA1
from £ 1.3298*
per piece
 
 piece
Infineon FP200R12N3T7B11BPSA1 IGBT, 200 A 1200 V / 2539829 (2 offers) 
Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW
Infineon
FP200R12N3T7B11BPSA1
from £ 275.191*
per piece
 
 piece
Transistor: IGBT; 650V; 5A; 10W; TO220F; Eoff: 0.12mJ; Eon: 0.09mJ (1 offer) 
Manufacturer: ALPHA & OMEGA SEMICONDUCTOR Mounting: THT Case: TO220F Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.87V Collector current: 5A Pul...
Alpha & Omega Semiconductor
AOTF5B65M1
from £ 0.38*
per piece
 
 piece
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