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Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3 / 2591532

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piece

Product information

Item number:
2794E-2591532

Manufacturer:
Infineon

Manufacturer no.:
IKW50N65F5FKSA1

EAN/GTIN:
n/a

Search terms:

IGBT
Power transistor
Transistor
Transistors

Maximum Continuous Collector Current = 80 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 305 W
Package Type = PG-TO247-3

More information:


Maximum Continuous Collector Current:	80 A
Maximum Collector Emitter Voltage:	650 V
Maximum Gate Emitter Voltage:	±20V
Maximum Power Dissipation:	305 W
Package Type:	PG-TO247-3

... > Semiconductors > Discrete Semiconductors > IGBTs

Other search terms: power transistor, 2591532, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW50N65F5FKSA1

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2794 East Midlands NN17

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from £ 2.622*

£ 2.881*

6546 Yorkshire LS12

2 days

14311

£ 2.00*

from £ 1.90*

£ 4.35*

5070 West Midlands B46

£ 7.70*

from £ 2.33*

£ 4.67*

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Prices: 2794 East Midlands NN17

Order quantity	Net	Gross	Unit

from 30 pieces	£ 2.881*	£ 3.457	per piece
from 60 pieces	£ 2.737*	£ 3.284	per piece
from 150 pieces	£ 2.622*	£ 3.146	per piece
Orders only in multiples of 30 pieces
Minimum order quantity: 30 pieces ( £ 86.43* plus VAT )

Stock level: 2794 East Midlands NN17

Shipping: 2794 East Midlands NN17

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from £ 0.00*	Carriage paid

Rights to return this item: 2794 East Midlands NN17

Period of time:	On the first day
Condition of packaging:	Original packaging opened, but not damaged
Condition of goods:	Unused
Return costs:	Paid by supplier
Processing fee:	Costs to be determined by the trading partner based on a case-by-case review.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.