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Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3 / 2250571


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Product information
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Item number:
     2794E-2250571
Manufacturer:
     Infineon
Manufacturer no.:
     IHW30N65R6XKSA1
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
Transistor
Transistors
The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.High ruggedness and stable temperature behaviour Low EMI Pb-free lead plating, RoHS compliant Powerful monolithic reverse-conducting diode with low forward voltage
More information:
Maximum Continuous Collector Current:
65 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±30V
Maximum Power Dissipation:
160 W
Package Type:
PG-TO247-3
Pin Count:
3
Other search terms: power transistor, 2250571, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IHW30N65R6XKSA1
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