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Transistor: N-MOSFET x2; unipolar; 60V; 7A; 9.6W; PDFN56


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Product information

Item number:
     5070-TSM250NB06DCR-RLG
Manufacturer:
     Taiwan Semiconductor
Manufacturer no.:
     TSM250NB06DCR RLG
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: TAIWAN SEMICONDUCTOR
Mounting: SMD
Case: PDFN56
Drain-source voltage: 60V
Drain current: 7A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 9.6W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±20V
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