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  Field effect transistors available for purchase online at Mercateo (705 offers of 4,469,739 product items)

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Fairchild Semiconductor 2N7000 N Channel MOSFET (2 offers) 
Enhancement mode field effect transistor, N-Channel type, 60V drain-source breakdown voltage, 1.2R drain-source on-resistance, 200mA drain current, 20V gate source voltage, 10ns turn-on time, 10ns ...
Fairchild
2N7000
from £ 0.0461*
per piece
 
 piece
Fairchild Semiconductor BS170 N Channel MOSFET (1 offer) 
Enhancement mode field effect transistor, N-Channel type, 60V drain-source breakdown voltage, 1.2R drain-source on-resistance, 500mA drain current, 20V gate source voltage, 10ns turn-on time, 10ns ...
Fairchild
BS170
from £ 0.0711*
per piece
 
 pieces
Junction FET TO-18 N (1 offer) 
Junction FET, Housing type: TO-18, Polarity: N, Drain current: 50 mA, Power dissipation: 360 mW
NTE Electronics
NTE466
from £ 4.11*
per piece
 
 piece
Junction FET TO-92 N (1 offer) 
Junction FET, Housing type: TO-92, Polarity: N, Drain current: 5...15 mA, Power dissipation: 360 mW
NTE Electronics
NTE312
from £ 1.39*
per piece
 
 piece
Junction FET TO-92 N (1 offer) 
Junction FET, Housing type: TO-92, Polarity: N, Drain current: 1...5 mA, Power dissipation: 310 mW
NTE Electronics
NTE457
from £ 1.03*
per piece
 
 piece
Junction FET TO-92 N (1 offer) 
Junction FET, Housing type: TO-92, Polarity: N, Drain current: 0.5...12 mA, Power dissipation: 250 mW
NTE Electronics
NTE458
from £ 6.31*
per piece
 
 piece
MOSFET N, 60 V 35 A 125 W TO-220 (1 offer) 
MOSFET, Operating temperature: -55...+175 °C, Housing type: TO-220, Polarity: N, Variants: Enhancement mode, Power dissipation: 125 W
NTE Electronics
NTE2389
from £ 4.89*
per piece
 
 piece
MOSFET N, 60 V 50 A 150 W TO-220 (1 offer) 
MOSFET, Operating temperature: -55...+175 °C, Housing type: TO-220, Polarity: N, Variants: Enhancement mode, Power dissipation: 150 W
NTE Electronics
NTE2395
from £ 4.56*
per piece
 
 piece
Unijunction FET TO-92 PN (1 offer) 
Unijunction FET, Housing type: TO-92, Polarity: PN, Conducting-state current: 150 mA, Power dissipation: 300 mW
NTE Electronics
NTE6402
from £ 2.00*
per piece
 
 piece
Fairchild BS170_D26Z N-channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 (1 offer) 
Channel Type = N Maximum Continuous Drain Current = 500 mA Maximum Drain Source Voltage = 60 V Maximum Drain Source Resistance = 5 Ω Minimum Gate Threshold Voltage = 0.8V Maximum Gate Source Voltag...
Fairchild
BS170_D26Z
from £ 4.27*
per 50 pieces
 
 pack
Junction FET SOT-23 N channel (1 offer) 
Junction FET, Housing type: SOT-23, Polarity: N channel, Drain current: 50...150 mA, Power dissipation: 225 mW
ON Semiconductor
MMBF4393LT1G
from £ 0.0665*
per piece
 
 piece
Junction FET TO-92 N (1 offer) 
Junction FET, Housing type: TO-92, Polarity: N, Drain current: 6...13 mA, Power dissipation: 300 mW
n/a
BF256B
from £ 0.0561*
per piece
 
 piece
ON Semiconductor 2N7000 N-channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 (1 offer) 
Channel Type = N Maximum Continuous Drain Current = 200 mA Maximum Drain Source Voltage = 60 V Maximum Drain Source Resistance = 5 Ω Minimum Gate Threshold Voltage = 0.8V Maximum Gate Source Voltag...
ON Semiconductor
2N7000
from £ 1.58*
per 20 pieces
 
 pack
MOSFET N, 100 V 0.17 A 0.2 W SOT-23 (1 offer) 
MOSFET, Operating temperature: -55...+150 °C, Housing type: SOT-23, Polarity: N, Variants: Enhancement mode, Power dissipation: 0.2 W
Diodes
BSS123-7-F
from £ 0.0267*
per piece
 
 piece
MOSFET N, 100 V 0.17 A 0.36 W SOT-23 (1 offer) 
MOSFET, Operating temperature: -55...+150 °C, Housing type: SOT-23, Polarity: N, Variants: Enhancement mode, Power dissipation: 0.36 W
Diodes
BSS123Q-13
from £ 0.0376*
per piece
 
 piece
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