Enhancement mode field effect transistor, N-Channel type, 60V drain-source breakdown voltage, 1.2R drain-source on-resistance, 200mA drain current, 20V gate source voltage, 10ns turn-on time, 10ns turn-off time, 400mW power, TO-92 case, these n-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology, these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance, high density cell design for low rds(on), voltage controlled small signal switch, rugged and reliable, high saturation current capability, they can be used in most applications requiring up to 400mA dc and can deliver pulsed currents up to 2A, these products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications, supplied in bulk pack. |
