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Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W


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Item number:
     5070-SISS61DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISS61DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -89.6A
On-state resistance: 9.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 42.1W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 231nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -200A
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5070 West Midlands B46
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