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| Item number: 2794E-1884905 Manufacturer no.: SiSS61DN-T1-GE3 EAN/GTIN: n/a |
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| Channel Type = P Maximum Continuous Drain Current = 111.9 A Maximum Drain Source Voltage = 20 V Package Type = PowerPAK 1212-8S Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 9.8 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.9V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 65.8 W Transistor Configuration = Single Maximum Gate Source Voltage = ±8 V Length = 3.3mm Height = 0.78mm More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 111.9 A | Maximum Drain Source Voltage: | 20 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 9.8 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 0.9V | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 65.8 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±8 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1884905, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS61DNT1GE3 |
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