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N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 onsemi IRL640A / 8078711


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Item number:
     2794E-8078711
Manufacturer:
     onsemi
Manufacturer no.:
     IRL640A
EAN/GTIN:
     5059042499339
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
18 A
Maximum Drain Source Voltage:
200 V
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
180 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
110 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
10.67mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
1
Other search terms: MOSFET transistor, field effect transistor, 8078711, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, IRL640A
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