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N-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-223 onsemi NDT014L / 8061255


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Product information
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Item number:
     2794E-8061255
Manufacturer:
     onsemi
Manufacturer no.:
     NDT014L
EAN/GTIN:
     5059042623505
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
2.8 A
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-223
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
360 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
3 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
6.7mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
1
Other search terms: MOSFET transistor, field effect transistor, 8061255, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NDT014L
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