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N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KW / 8051135


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Item number:
     2794E-8051135
Manufacturer:
     onsemi
Manufacturer no.:
     2N7002KW
EAN/GTIN:
     5059042588545
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
300 mA
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
4.8 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1.1V
Maximum Power Dissipation:
350 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
2.92mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
1
Other search terms: MOSFET transistor, field effect transistor, 8051135, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, 2N7002KW
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