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N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK onsemi RFD3055LESM9A / 8022159


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Item number:
     2794E-8022159
Manufacturer:
     onsemi
Manufacturer no.:
     RFD3055LESM9A
EAN/GTIN:
     5059042611786
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
11 A
Maximum Drain Source Voltage:
60 V
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
107 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
38 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-16 V, +16 V
Length:
6.73mm
Maximum Operating Temperature:
+175 °C
Number of Elements per Chip:
1
Other search terms: MOSFET transistor, SMD transistor, SMD transistors, field effect transistor, 8022159, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, RFD3055LESM9A
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