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N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB onsemi BUZ11-NR4941 / 7613515

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packet

Product information

Item number:
2794E-7613515

Manufacturer:
onsemi

Manufacturer no.:
BUZ11_NR4941

EAN/GTIN:
5060641247382

Search terms:

Field effect transistor
Field effect transistors
Power transistor
MOSFET

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

More information:


Channel Type:	N
Maximum Continuous Drain Current:	30 A
Maximum Drain Source Voltage:	50 V
Package Type:	TO-220AB
Mounting Type:	Through Hole
Pin Count:	3
Maximum Drain Source Resistance:	40 mΩ
Channel Mode:	Enhancement
Minimum Gate Threshold Voltage:	2.1V
Maximum Power Dissipation:	75 W
Transistor Configuration:	Single
Maximum Gate Source Voltage:	-20 V, +20 V
Length:	10.67mm
Maximum Operating Temperature:	+150 °C
Number of Elements per Chip:	1

... > Semiconductors > Discrete Semiconductors > MOSFETs

Other search terms: MOSFET transistor, field effect transistor, 7613515, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, BUZ11_NR4941

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