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N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK onsemi FDB52N20TM / 7598983

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packet

Product information

Item number:
2794E-7598983

Manufacturer:
onsemi

Manufacturer no.:
FDB52N20TM

EAN/GTIN:
5059042921946

Search terms:

Field effect transistor
Field effect transistors
Power transistor
MOSFET

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

More information:


Channel Type:	N
Maximum Continuous Drain Current:	52 A
Maximum Drain Source Voltage:	200 V
Package Type:	D2PAK (TO-263)
Series:	UniFET
Mounting Type:	Surface Mount
Pin Count:	3
Maximum Drain Source Resistance:	49 mΩ
Channel Mode:	Enhancement
Minimum Gate Threshold Voltage:	3V
Maximum Power Dissipation:	357 W
Transistor Configuration:	Single
Maximum Gate Source Voltage:	-30 V, +30 V
Length:	9.98mm
Maximum Operating Temperature:	+150 °C

... > Semiconductors > Discrete Semiconductors > MOSFETs

Other search terms: MOSFET transistor, field effect transistor, 7598983, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDB52N20TM

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Order quantity	Net	Gross	Unit

1 packet	£ 9.90*	£ 11.88	per packet
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