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Dual N-Channel MOSFET, 500 mA, 25 V, 6-Pin SOT-363 onsemi FDG6303N / 7390189


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Item number:
     2794E-7390189
Manufacturer:
     onsemi
Manufacturer no.:
     FDG6303N
EAN/GTIN:
     5059042807400
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode Dual MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
500 mA
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-363
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
770 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.65V
Maximum Power Dissipation:
300 mW
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
+8 V
Length:
2mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
Other search terms: MOSFET transistor, field effect transistor, 7390189, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDG6303N
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