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Dual N/P-Channel-Channel MOSFET, 220 mA, 410 mA, 25 V, 6-Pin SOT-363 onsemi FDG6322C / 7390183


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Item number:
     2794E-7390183
Manufacturer:
     onsemi
Manufacturer no.:
     FDG6322C
EAN/GTIN:
     5059042707953
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode Dual MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N, P
Maximum Continuous Drain Current:
220 mA, 410 mA
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-363
Mounting Type:
Surface Mount
Pin Count:
6
Maximum Drain Source Resistance:
1.9 Ω, 7 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.65V
Maximum Power Dissipation:
300 mW
Transistor Configuration:
Isolated
Maximum Gate Source Voltage:
-8 V, +8 V
Length:
2mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
Other search terms: MOSFET transistor, SMD transistor, SMD transistors, field effect transistor, 7390183, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDG6322C
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2794 East Midlands NN17
5
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Prices: 2794 East Midlands NN17
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Stock level: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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