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N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F onsemi FQPF6N80C / 6715290


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Item number:
     2794E-6715290
Manufacturer:
     onsemi
Manufacturer no.:
     FQPF6N80C
EAN/GTIN:
     5059042847536
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor ‘s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
5.5 A
Maximum Drain Source Voltage:
800 V
Package Type:
TO-220F
Series:
QFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
2.5 Ω
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
51 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-30 V, +30 V
Length:
10.16mm
Maximum Operating Temperature:
+150 °C
Other search terms: 6715290, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FQPF6N80C
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