|  |
| |
| Item number:
2794E-6714736 Manufacturer no.:
BS170 EAN/GTIN:
5060641279796 |
| |
|
| | |
| Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 500 mA | Maximum Drain Source Voltage: | 60 V | Package Type: | TO-92 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 5 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 0.8V | Maximum Power Dissipation: | 830 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5.2mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| | | |
| |