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| Item number: 2794E-6714733 Manufacturer no.: 2N7000 EAN/GTIN: 5059042847239 |
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| Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 200 mA | Maximum Drain Source Voltage: | 60 V | Package Type: | TO-92 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 5 Ω | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 0.8V | Maximum Power Dissipation: | 400 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5.2mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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