|  |
| |
| Item number:
2794E-6710441 Manufacturer no.:
FDN357N EAN/GTIN:
5059042845396 |
| |
|
| | |
| Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 1.9 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 600 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 500 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 2.92mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
|
| | |
| | | |
| | | |
| |