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N-Channel MOSFET, 2.2 A, 30 V, 3-Pin SOT-23 onsemi FDN337N / 6710429


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Product information
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Item number:
     2794E-6710429
Manufacturer:
     onsemi
Manufacturer no.:
     FDN337N
EAN/GTIN:
     5059042842074
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
2.2 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
65 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
1V
Minimum Gate Threshold Voltage:
0.4V
Maximum Power Dissipation:
500 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-8 V, +8 V
Length:
2.92mm
Maximum Operating Temperature:
+150 °C
Other search terms: MOSFET transistor, field effect transistor, 6710429, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDN337N
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