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| Item number:
2794E-5411146 Manufacturer no.:
IRFBG30PBF EAN/GTIN:
5059040893276 |
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| N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 3.1 A | Maximum Drain Source Voltage: | 1000 V | Package Type: | TO-220AB | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 5 Ω | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 125 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.41mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Other search terms: MOSFET, MOSFET transistor, Transistor, Transistors, field effect transistor, 5411146, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, IRFBG30PBF |
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