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| Item number:
2794E-2224666 Manufacturer no.:
IPD50N06S4L08ATMA2 EAN/GTIN:
n/a |
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| The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The ″Field-Effect″ means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Green Product (RoHS compliant) MSL1 up to 260°C peak reflow AEC Q101 qualified OptiMOS™ - power MOSFET for automotive applications More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 50 A | Maximum Drain Source Voltage: | 60 V | Package Type: | TO-252 | Series: | OptiMOS | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0078 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.2V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Other search terms: 2224666, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD50N06S4L08ATMA2 |
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