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| Item number:
2794E-1868443 Manufacturer no.:
FDG6321C EAN/GTIN:
5059045736769 |
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| These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.N-Ch 0.50 A, 25 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V RDS(ON) = 0.60 Ω @ VGS= 2.7 V P-Ch -0.41 A, -25 V RDS(ON) = 1.1 Ω @ VGS= -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Applications This product is general usage and suitable for many different applications. More information: | | Package Type: | SC-70 | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 300 mW | Pin Count: | 6 | Number of Elements per Chip: | 2 | Dimensions: | 2.2 x 1.35 x 1mm | Maximum Operating Temperature: | +150 °C | Length: | 2.2mm | Minimum Operating Temperature: | -55 °C | Width: | 1.35mm |
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| Other search terms: Power transistor, SMD transistor, SMD transistors, Transistor, Transistors, field effect transistor, 1868443, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, FDG6321C |
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