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| Item number:
2794E-1787600 Manufacturer no.:
FDG6322C EAN/GTIN:
n/a |
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| Enhancement Mode Dual MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. More information: | | Channel Type: | N, P | Maximum Continuous Drain Current: | 220 mA, 410 mA | Maximum Drain Source Voltage: | 25 V | Package Type: | SOT-363 | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 1.9 Ω, 7 Ω | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 0.65V | Maximum Power Dissipation: | 300 mW | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -8 V, +8 V | Length: | 2mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Other search terms: 1787600, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDG6322C |
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