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| Item number:
2794E-1705339 Manufacturer no.:
BSH111BKR EAN/GTIN:
5059043820385 |
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| Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technologyLow threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 3 kV HBM Relay driver High-speed line driver Low-side loadswitch Switching circuits More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 335 mA | Maximum Drain Source Voltage: | 55 V | Package Type: | TO-236 | Series: | BSH111BK | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 8.1 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1.3V | Minimum Gate Threshold Voltage: | 0.6V | Maximum Power Dissipation: | 1.45 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 10 V | Length: | 3mm |
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| Other search terms: MOSFET transistor, MOSFET relays, MOSFET relay, Mains monitoring relays, Mains monitoring relay, Voltage relay, Voltage relays, Voltage monitoring relay, Voltage monitoring relays, field effect transistor, 1705339, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, BSH111BKR |
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