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N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK onsemi FDB52N20TM / 1662543


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Item number:
     2794E-1662543
Manufacturer:
     onsemi
Manufacturer no.:
     FDB52N20TM
EAN/GTIN:
     5059042042580
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
More information:
Channel Type:
N
Maximum Continuous Drain Current:
52 A
Maximum Drain Source Voltage:
200 V
Package Type:
D2PAK (TO-263)
Series:
UniFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
49 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
357 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-30 V, +30 V
Length:
9.98mm
Maximum Operating Temperature:
+150 °C
Other search terms: MOSFET transistor, SMD transistor, SMD transistors, field effect transistor, 1662543, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDB52N20TM
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Rights to return this item: 2794 East Midlands NN17
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