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| Item number:
2794E-1530731 Manufacturer no.:
PMXB56ENZ EAN/GTIN:
5059043636573 |
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| N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 49 mΩ Very fast switching Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 3.2 A | Maximum Drain Source Voltage: | 30 V | Package Type: | DFN1010D-3 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 87 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 8.33 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C |
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