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N-Channel MOSFET, 3.9 A, 30 V, 3-Pin SOT-23 Nexperia PMV50ENEAR / 1530664


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Product information
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Item number:
     2794E-1530664
Manufacturer:
     Nexperia
Manufacturer no.:
     PMV50ENEAR
EAN/GTIN:
     5059043674742
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Relay driver High-speed line driver Low-side loadswitch Switching circuits
More information:
Channel Type:
N
Maximum Continuous Drain Current:
3.9 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
69 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
3.9 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
20 V
Length:
3mm
Maximum Operating Temperature:
+150 °C
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