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Dual P-Channel MOSFET, 500 mA, -20 V, 8-Pin DFN1010B-6 Nexperia PMDXB950UPELZ / 1528344


Quantity:  packet  
Product information
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Product Image
Item number:
     2794E-1528344
Manufacturer:
     Nexperia
Manufacturer no.:
     PMDXB950UPELZ
EAN/GTIN:
     5059043632896
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Low leakage current Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω Relay driver High-speed line driver High-side load switch Switching circuits
More information:
Channel Type:
P
Maximum Continuous Drain Current:
500 mA
Maximum Drain Source Voltage:
-20 V
Package Type:
DFN1010B-6
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
3.5 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
-0.95V
Minimum Gate Threshold Voltage:
-0.45V
Maximum Power Dissipation:
4025 mW
Maximum Gate Source Voltage:
8 V
Length:
1.15mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
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£ 2.15*
1 packet contains 25 pieces (£ 0.086* per piece)
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