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| Item number: 2794E-1528344 Manufacturer no.: PMDXB950UPELZ EAN/GTIN: 5059043632896 |
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| P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Low leakage current Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω Relay driver High-speed line driver High-side load switch Switching circuits More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 500 mA | Maximum Drain Source Voltage: | -20 V | Package Type: | DFN1010B-6 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 3.5 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | -0.95V | Minimum Gate Threshold Voltage: | -0.45V | Maximum Power Dissipation: | 4025 mW | Maximum Gate Source Voltage: | 8 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Other search terms: MOSFET transistor, MOSFET relays, MOSFET relay, Mains monitoring relays, Mains monitoring relay, Voltage relay, Voltage relays, Voltage monitoring relay, Voltage monitoring relays, field effect transistor, 1528344, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, PMDXB950UPELZ |
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