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| Item number:
2794E-1513187 Manufacturer no.:
PMV55ENEAR EAN/GTIN:
5059043653440 |
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| Automotive MOSFETs, The worlds largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175°C rating60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 3.1 A | Maximum Drain Source Voltage: | 60 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 120 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.7V | Minimum Gate Threshold Voltage: | 1.3V | Maximum Power Dissipation: | 8.36 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 3mm | Maximum Operating Temperature: | +150 °C |
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