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| Item number:
2794E-1513178 Manufacturer no.:
PMDXB600UNEZ EAN/GTIN:
5059043678351 |
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| N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 600 mA | Maximum Drain Source Voltage: | 20 V | Package Type: | DFN1010B-6 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 3 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 0.95V | Minimum Gate Threshold Voltage: | 0.45V | Maximum Power Dissipation: | 4025 mW | Maximum Gate Source Voltage: | 8 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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