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P-Channel MOSFET, 3.2 A, -12 V, 4-Pin DFN1010D-3 Nexperia PMXB65UPEZ / 1513145


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Product information
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Item number:
     2794E-1513145
Manufacturer:
     Nexperia
Manufacturer no.:
     PMXB65UPEZ
EAN/GTIN:
     5059043679532
Search terms:
Field effect transistor
Field effect transistors
Power MOSFET
Power transistor
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance RDSon = 59 mΩ Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
More information:
Channel Type:
P
Maximum Continuous Drain Current:
3.2 A
Maximum Drain Source Voltage:
-12 V
Package Type:
DFN1010D-3
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
880 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
-1V
Minimum Gate Threshold Voltage:
-0.4V
Maximum Power Dissipation:
8330 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
8 V
Length:
1.15mm
Maximum Operating Temperature:
+150 °C
Other search terms: MOSFET, MOSFET transistor, field effect transistor, 1513145, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, PMXB65UPEZ
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