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| Item number: 2794E-1513073 Manufacturer no.: PMXB120EPEZ EAN/GTIN: 5059043038780 |
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| P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 350 mΩ More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 2.4 A | Maximum Drain Source Voltage: | 30 V | Package Type: | DFN1010D-3, SOT1215 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 187 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | -2.5V | Minimum Gate Threshold Voltage: | -1V | Maximum Power Dissipation: | 8.33 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C |
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