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P-Channel MOSFET, 3.3 A, -20 V, 3-Pin SOT-23 Nexperia PMV65XPEAR / 1513017


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Product information
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Item number:
     2794E-1513017
Manufacturer:
     Nexperia
Manufacturer no.:
     PMV65XPEAR
EAN/GTIN:
     5059043692692
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Automotive MOSFETs, The worlds largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175°C rating20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 890 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified
More information:
Channel Type:
P
Maximum Continuous Drain Current:
3.3 A
Maximum Drain Source Voltage:
-20 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
125 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
-1.25V
Minimum Gate Threshold Voltage:
-0.75V
Maximum Power Dissipation:
6250 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
12 V
Length:
3mm
Maximum Operating Temperature:
+150 °C
Other search terms: MOSFET transistor, field effect transistor, 1513017, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, PMV65XPEAR
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