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| Item number: 2794E-1513017 Manufacturer no.: PMV65XPEAR EAN/GTIN: 5059043692692 |
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| Automotive MOSFETs, The worlds largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175°C rating20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 890 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 3.3 A | Maximum Drain Source Voltage: | -20 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 125 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | -1.25V | Minimum Gate Threshold Voltage: | -0.75V | Maximum Power Dissipation: | 6250 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 12 V | Length: | 3mm | Maximum Operating Temperature: | +150 °C |
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