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N-Channel MOSFET, 270 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002BKR / 1512607


Quantity:  packet  
Product information
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Item number:
     2794E-1512607
Manufacturer:
     Nexperia
Manufacturer no.:
     NX7002BKR
EAN/GTIN:
     5059043684376
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM
More information:
Channel Type:
N
Maximum Continuous Drain Current:
270 mA
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
2.8 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.1V
Minimum Gate Threshold Voltage:
1.1V
Maximum Power Dissipation:
1670 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
20 V
Length:
3mm
Maximum Operating Temperature:
+150 °C
Other search terms: MOSFET transistor, field effect transistor, 1512607, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, NX7002BKR
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