rf elements  (410 offers of 5,342,802 product items)

As Low Noise Amplifier (LNA) in:

RF Bipolar Transistors, Infineon

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. RF Bipolar Transistors, ON Semiconductor

The BFP720 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

Transistor Type = NPN Maximum DC Collector Current = 35 mA Maximum Collector Emitter Voltage = 2.25 V Package Type = TSFP Mounting Type = Surface Mount Maximum Power Dissipation = 75 mW Transistor ...

NPN Silicon RF Transistor

RF Bipolar Transistors, ROHM. Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.

The ESD7351 Series is designed to protect voltage sensitive components that require ultra−low capacitance from ESD events. Excellent clamping capability, low capacitance, low leakage, and fast resp...

This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because it is small surface mount package. This RF transistor is PPAP capable fo...

NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low...

RF Bipolar Transistors, Diodes Inc

Silicon Schottky Diodes

RF Bipolar Transistors, Diodes Inc

RF Bipolar Transistors, Infineon