rf elements  (455 offers of 6,213,962 product items)

RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

Products with NSV- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified. RF Schottky Diodes, ON Semiconductor

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. RF Bipolar Transistors, ON Semiconductor

Products with NSV- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified. PIN Diodes, ON Semiconductor. A wide range of PIN diodes suitable for use in RF switching and attenuator ap...

Small Signal NPN Transistors, Taiwan Semiconductor

Products with NSV- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified. RF Schottky Diodes, ON Semiconductor

Small Signal NPN Transistors, Taiwan Semiconductor

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. RF Bipolar Transistors, ON Semiconductor

Package Type = TSLP-7-1 Mounting Type = Surface Mount Pin Count = 7 Number of Elements per Chip = 1

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. RF Bipolar Transistors, ON Semiconductor

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. RF Bipolar Transistors, ON Semiconductor

NSR201MX is a RF schottky barrier diode, 2 V, 50 mA, 0.15 pF, Single X2DFN2. This schottky barrier diode is designed for high frequency application. It can be used widely for power detector of C Ba...

General Purpose PNP Transistors, Taiwan Semiconductor

General Purpose PNP Transistors, Taiwan Semiconductor

The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology.