The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.AC Input Response (FOD814) Current Transfer Ratio FOD817: ...
Mounting Type = Surface Mount Output Device = Phototransistor Maximum Forward Voltage = 1.4V Number of Channels = 1 Number of Pins = 4 Package Type = SMT Input Current Type = AC/DC Typical Rise Tim...
The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is ...
FOD8314T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation 1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET ...
FOD8314T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation 1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET ...