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| Item number:
2794E-1784237 Manufacturer no.:
FOD819 EAN/GTIN:
n/a |
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| The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, RBE, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.High Speed Performance ∼ 30kHz Current Transfer Ratio: 100% to 600% Minimum BVCEO of 80V Guaranteed Applications Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver More information: | | Mounting Type: | Through Hole | Output Device: | Phototransistor | Maximum Forward Voltage: | 1.4V | Number of Channels: | 1 | Number of Pins: | 4 | Package Type: | DIP | Input Current Type: | AC | Typical Rise Time: | 12µs | Maximum Input Current: | 400 mA | Isolation Voltage: | 5000 (Minimum) Vrms ac | Logic Output: | Yes | Maximum Current Transfer Ratio: | 600% | Minimum Current Transfer Ratio: | 100% | Typical Fall Time: | 20µs | Series: | FOD819 |
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| Other search terms: 1784237, Displays & Optoelectronics, Optocouplers & Photodetectors, Optocouplers, onsemi, FOD819 |
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