SRAM (389 items)

This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state whe...

Memory Size = 1Mbit Organisation = 64k x 16 bit Number of Words = 64k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Timing Type ...

This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) ...

Memory Size = 1Mbit Organisation = 64k x 16 bit Number of Words = 64k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Timing Type = Asynchronous Mounting Type = Surface Mount Pack...

Temperature ranges Industrial: –40 °C to 85 °C Automotive-A: –40 °C to 85 °C Pin-and function-compatible with CY7C1021CV33 High speed tAA = 10 ns Low active power ICC = 60 mA @ 10 ns Low CMOS stand...

High speed tAA = 10 ns/15 ns Embedded ECC for single-bit error correction[1, 2] Low active and standby currents Active current: ICC = 38 mA typical Standby current: ISB2 = 6 mA typical Operating vo...

Memory Size = 4Mbit Organisation = 256k x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 100MHz Low Power = ...

High speed tAA = 10 ns Temperature range Automotive-E: -40°C to 125°C Automotive-A: -40°C to 85°C Embedded ECC for single-bit error correction[1, 2] Low active and standby currents Active current I...

Memory Size = 4Mbit Organisation = 256k x 16 Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Low Power = Ye...

Memory Size = 4Mbit Organisation = 256k x 16 bit Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Low Power ...

High speed tAA = 10 ns / 15 ns Low active and standby currents Active current: ICC = 38-mA typical Standby current: ISB2 = 6-mA typical Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and...

CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while p...

Memory Size = 4Mbit Organisation = 512k x 8 Number of Words = 512k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns

Memory Size = 16Mbit Organisation = 1M x 16 bit Number of Words = 1 M Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 100MHz Low Power ...

High speed tAA = 10 ns Embedded error-correcting code (ECC) for single-bit error correction Low active power ICC = 90 mA typical Low CMOS standby power ISB2 = 20 mA typical Operating voltages of 3....