SRAM (389 items)

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

Static RAM, ISSI. The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asy...

The Cypress CY14X101PA combines a 1-Mbit nv SRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial SPI interface. The memory is organized as 128K words of 8 bits each. The ...

Memory Size = 1Mbit Organisation = 128k x 8 bit Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 15ns Clock Frequency = 104MHz Low Power = Yes Timing Type = Synchr...

Very high speed: 45 ns Temperature range Industrial: –40 °C to +85 °C Wide voltage range: 2.20 V to 3.60 V Ultra low standby power Typical standby current: 1 A Maximum standby current: 7 A (Industr...

Memory Size = 4Mbit Organisation = 256k x 16 bit Number of Words = 256k Number of Bits per Word = 16bit Maximum Random Access Time = 45ns Address Bus Width = 16bit Clock Frequency = 1MHz Low Power ...

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor. The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifi...

Memory Size = 4Mbit Organisation = 512k x 8 bit Number of Words = 512k Number of Bits per Word = 8bit Maximum Random Access Time = 45ns Address Bus Width = 8bit Clock Frequency = 1MHz Low Power = Y...

Very high speed: 45 ns Voltage range: 4.5 V to 5.5 V Pin compatible with CY62148B Ultra low standby power Typical standby current: 1 μA Maximum standby current: 7 μA (Industrial) Ultra low active p...

Memory Size = 1Mbit Organisation = 128k x 8 bit Number of Words = 128k Number of Bits per Word = 8bit Maximum Random Access Time = 10ns Address Bus Width = 8bit Clock Frequency = 1MHz Timing Type =...

Pin- and function-compatible with CY7C1018CV33 High speed tAA = 10 ns Low Active Power ICC = 60 mA @ 10 ns Low CMOS Standby Power ISB2 = 3 mA 2.0V Data retention Automatic power-down when deselecte...

Memory Size = 1Mbit Organisation = 64k x 16 bit Number of Words = 64k Number of Bits per Word = 16bit Maximum Random Access Time = 10ns Address Bus Width = 16bit Clock Frequency = 1MHz Timing Type ...