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NEXPERIA PSMN1R7-60BS Drain Source On State Resistance 0.00166 ohm Product


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2114712
Manufacturer:
     Nexperia
Manufacturer no.:
     PSMN1R7-60BS
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Drain Source On State Resistance 0.00166 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 120 A Operating Temperature Max 175 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 60 V Power Dissipation 306 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC Lead (23-Jan-2024) Rds(on) Test Voltage 10 V
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, NEXPERIA, PSMN1R7-60BS, 2114712, 211-4712
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onsemi
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