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N-Channel MOSFET, 7 A, 60 V, 3-Pin DPAK onsemi NCV8406BDTRKG / 1952460


Quantity:  packet  
Product information
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Product Image
Item number:
     2794E-1952460
Manufacturer:
     onsemi
Manufacturer no.:
     NCV8406BDTRKG
EAN/GTIN:
     n/a
Search terms:
Industrial relays
Power transistor
MOSFET
MOSFET transistor
NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) These Devices are Faster than the Rest of the NCV Devices NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free Applications Switch a Variety of Resistive, Inductive and Capacitive Loads Can Replace Electromechanical Relays and Discrete Circuits Automotive / Industrial
More information:
Channel Type:
N
Maximum Continuous Drain Current:
7 A
Maximum Drain Source Voltage:
60 V
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
210 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2V
Minimum Gate Threshold Voltage:
1.2V
Maximum Power Dissipation:
1.81 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±14 V
Length:
6.73mm
Maximum Operating Temperature:
+150 °C
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£ 1,462.50*
1 packet contains 2,500 pieces (£ 0.585* per piece)
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