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VISHAY SI8410DB-T2-E1 MOSFET, N-CH, 20V, 5.7A, TRENCHFET-4, Tr


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6692-2483412
Manufacturer:
     Vishay
Manufacturer no.:
     SI8410DB-T2-E1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Gate Source Threshold Voltage Max 850 mV Operating Temperature Max 150 °C Drain Source Voltage Vds 20 V Transistor Mounting Surface Mount Power Dissipation 1.8 W Product Range - Qualification - Continuous Drain Current Id 5.7 A Channel Type N Channel Drain Source On State Resistance 0.03 ohm SVHC No SVHC (10-Jun-2022) MSL MSL 1 - Unlimited No. of Pins 4 Pins Transistor Case Style TrenchFET Rds(on) Test Voltage 4.5 V
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI8410DB-T2-E1, 2483412, 248-3412
An overview of the conditions1
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from £ 3,152.82*
  
Price is valid from 500 packets
1 packet contains 6,000 pieces (from £ 0.52547* per piece)
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£ 3,843.576
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£ 3,801.816
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£ 3,787.92
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£ 3,783.384
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