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VISHAY SISS5623DN-T1-GE3 MOSFET, P-CH, 60V/36.3A/POWERPAK 1212-8S


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4199572
Manufacturer:
     Vishay
Manufacturer no.:
     SISS5623DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0195 ohm Product Range - No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Transistor Case Style PowerPAK 1212-8S Continuous Drain Current Id 36.3 A Operating Temperature Max 150 °C Drain Source Voltage Vds 60 V Power Dissipation 56.8 W Qualification - Gate Source Threshold Voltage Max 2.6 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISS5623DN-T1-GE3, 4199572, 419-9572
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6546 Yorkshire LS12
5845
1
£ 9.90*
from £ 0.577*
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Prices: 6546 Yorkshire LS12
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
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