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TOSHIBA TK10E80W,S1X(S MOSFET, N-CH, 800V, 9.5A, TO-220


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4172994
Manufacturer:
     Toshiba
Manufacturer no.:
     TK10E80W,S1X(S
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.46 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 9.5 A Operating Temperature Max 150 °C Transistor Case Style TO-220 Drain Source Voltage Vds 800 V Power Dissipation 130 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TK10E80W,S1X(S, 4172994, 417-2994
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