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Item
ROHM BSM600D12P4G103 MOSFET, DUAL N-CH, 1.2KV, 567A, MODULE
Quantity:
piece
Product information
Item number:
6546-4168760
Manufacturer:
ROHM Semiconductor
Manufacturer no.:
BSM600D12P4G103
EAN/GTIN:
n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins 11 Pins MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Transistor Case Style Module Continuous Drain Current Id 567 A Operating Temperature Max 150 °C Drain Source Voltage Vds 1.2 kV Power Dissipation 1.78 kW Gate Source Threshold Voltage Max 4.8 V SVHC No SVHC (17-Jan-2023)
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Semiconductors - Discretes
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Silicon Carbide (SiC) MOSFETs & Modules
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416-8760
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£ 1,085.03*
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