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ROHM BSM600D12P4G103 MOSFET, DUAL N-CH, 1.2KV, 567A, MODULE


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Item number:
     6546-4168760
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     BSM600D12P4G103
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins 11 Pins MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Transistor Case Style Module Continuous Drain Current Id 567 A Operating Temperature Max 150 °C Drain Source Voltage Vds 1.2 kV Power Dissipation 1.78 kW Gate Source Threshold Voltage Max 4.8 V SVHC No SVHC (17-Jan-2023)
Other search terms: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM600D12P4G103, 4168760, 416-8760
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