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ROHM RS6G100BGTB1 Rds(on) Test Voltage 10 V Drain Source On State Resistance


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4069587
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     RS6G100BGTB1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0026 ohm Product Range - No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 100 A Operating Temperature Max 150 °C Transistor Case Style HSOP Drain Source Voltage Vds 40 V Power Dissipation 59 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC Lead (17-Jan-2023)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, ROHM, RS6G100BGTB1, 4069587, 406-9587
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6546 Yorkshire LS12
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1
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